TAMU Homepage TAMU Libraries Homepage TAMU Digital Library Homepage

Dynamics of Subsurface and Surface Chemisorption for B, C, and N on Gaas and Inp

Show full item record

Title: Dynamics of Subsurface and Surface Chemisorption for B, C, and N on Gaas and Inp
Author: MENON, M.; Allen, Roland E.
Abstract: Using Hellmann-Feynman molecular-dynamics simulations, we have investigated interactions of first-row elements with the (110) surfaces of GaAs and InP. We find that these atoms prefer to occupy subsurface sites. The open structure of the tetrahedrally bonded GaAs and InP, together with the small sizes of the first-row elements, makes it relatively easy for these atoms to move beneath the surface. Surface chemisorption is also observed in the simulations, but is found to be metastable.
Description: Journals published by the American Physical Society can be found at http://journals.aps.org/
Publisher: American Physical Society
Subject: SEMICONDUCTOR SURFACES
ELECTRONIC STATES
SI(111)
SIMULATIONS
BORON
Physics
Department: Physics and Astronomy
URI: http://dx.doi.org/10.1103/PhysRevB.44.11293
Date: 1991

Citation

M. MENON and Roland E. Allen. Phys.Rev.B 44 11293-11301 1991."Copyright (1991) by the American Physical Society."

Files in this item

Files Size Format View
PhysRevB.44.11293.pdf 295.7Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record