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Electronic-Structure of the Semimetals Bi and Sb

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Title: Electronic-Structure of the Semimetals Bi and Sb
Author: LIU, Y.; Allen, Roland E.
Abstract: We have developed a third-neighbor tight-binding model, with spin-orbit coupling included, to treat the electronic properties of Bi and Sb. This model successfully reproduces the features near the Fermi surface that will be most important in semimetal-semiconductor device structures, including (a) the small overlap of valence and conduction bands, (b) the electron and hob effective masses, and (c) the shapes of the electron and:hole Fermi surfaces. The present tight-binding model treats these semimetallic properties quantitatively, and it should, therefore, be useful for calculations of the electronic properties of proposed semimetal-semiconductor systems, including superlattices and resonant-tunneling devices.
Description: Journals published by the American Physical Society can be found at http://journals.aps.org/
Publisher: American Physical Society
Subject: TRANSPORT-PROPERTIES
ENERGY-GAP
SEMICONDUCTORS
SUPERLATTICES
BISMUTH
HETEROSTRUCTURES
CRYSTALLINE
Physics
Department: Physics and Astronomy
URI: http://dx.doi.org/10.1103/PhysRevB.52.1566
Date: 1995

Citation

Y. LIU and Roland E. Allen. Phys.Rev.B 52 1566-1577 1995."Copyright (1995) by the American Physical Society."

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