TAMU Homepage TAMU Libraries Homepage TAMU Digital Library Homepage

Response of GaAs to fast intense laser pulses

Show full item record

Title: Response of GaAs to fast intense laser pulses
Author: Graves, JS; Allen, Roland E.
Abstract: Motivated by recent experiments, we have performed simulations which show in detail how the electrons and ions in GaAs respond to fast intense laser pulses (with durations of order 100 fs and intensities of order 1-10 TW/cm(2)). The method of tight-binding electron-ion dynamics is used, in which an arbitrarily strong radiation field is included through a time-dependent Peierls substitution. The population of excited electrons, the atomic displacements, the atomic pair-correlation function, the band structure, and the imaginary part of the dielectric function are all calculated as functions of time, during and after application of each pulse. Above a threshold intensity, which results in promotion of about 10% of the electrons to the conduction band, the lattice is destabilized and the band gap collapses to zero. This is most clearly revealed in the dielectric function epsilon(omega), which exhibits metallic behavior and loses its structural features after 100-200 fs. [S0163-1829(98)01843-8].
Description: Journals published by the American Physical Society can be found at http://journals.aps.org/
Publisher: American Physical Society
Subject: ELECTRON-HOLE PLASMA
INDUCED PHASE-TRANSITIONS
HELLMANN-FEYNMAN
THEOREM
TIGHT-BINDING THEORY
SEMICONDUCTORS
SI
INSTABILITY
DYNAMICS
SILICON
SURFACE
Physics
Department: Physics and Astronomy
URI: http://dx.doi.org/10.1103/PhysRevB.58.13627
Date: 1998

Citation

JS Graves and Roland E. Allen. Phys.Rev.B 58 13627-13633 1998."Copyright (1998) by the American Physical Society."

Files in this item

Files Size Format View
PhysRevB.58.13627.pdf 208.3Kb PDF View/Open

This item appears in the following Collection(s)

Show full item record