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Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors

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Title: Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors
Author: Sinova, Jairo; Jungwirth, T.; Liu, X.; Sasaki, Y.; Furdyna, JK; Atkinson, WA; MacDonald, AH.
Abstract: We describe a theory of Mn local-moment magnetization relaxation due to p-d kinetic-exchange coupling with the itinerant-spin subsystem in the ferromagnetic semiconductor (Ga,Mn)As alloy. The theoretical Gilbert damping coefficient implied by this mechanism is calculated as a function of Mn-moment density, hole concentration, and quasiparticle lifetime. Comparison with experimental ferromagnetic resonance data suggests that in annealed strongly metallic samples, p-d coupling contributes significantly to the damping rate of the magnetization precession at low temperatures. By combining the theoretical Gilbert coefficient with the values of the magnetic anisotropy energy, we estimate that the typical critical current for spin-transfer magnetization switching in all-semiconductor trilayer devices can be as low as similar to10(5) A cm(-2).
Description: Journals published by the American Physical Society can be found at http://journals.aps.org/
Publisher: American Physical Society
Subject: SPIN-WAVES
MULTILAYERS
EXCITATION
GA1-XMNXAS
RESONANCE
FILMS
Physics
Department: Physics and Astronomy
URI: http://dx.doi.org/10.1103/PhysRevB.69.085209
Date: 2004

Citation

Jairo Sinova, T. Jungwirth, X. Liu, Y. Sasaki, JK Furdyna, WA Atkinson and AH MacDonald. Phys.Rev.B 69 085209 2004."Copyright (2004) by the American Physical Society."

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